WebJan 13, 2024 · Hydrogenated amorphous silicon (a-Si:H) is known for exhibiting light-induced metastable properties that are reversible upon annealing. While these are commonly associated with the well-known deleterious Staebler–Wronski effect in the field of thin-film silicon solar cells, the associated changes in optical properties have not been well studied. WebThe refractive index of silicon was measured at room temperature over the range 1.1–2.0 μ by autocollimation in an ~12° wedge. The image was observed by sweeping it across a slit in front of a lead sulfide cell whose output was displayed vertically on an oscilloscope while the sweep frequency was displayed horizontally. The problems of measuring the …
Amorphous Silicon Photonics IntechOpen
WebJan 13, 2024 · Hydrogenated amorphous silicon (a-Si:H) is known for exhibiting light-induced metastable properties that are reversible upon annealing. While these are … The following examples show the versatility of using the Forouhi–Bloomer dispersion equations to characterize thin films utilizing a tool based on near-normal incident spectroscopic reflectance. Near-normal spectroscopic transmittance is also utilized when the substrate is transparent. The n(λ) and k(λ) spectra of each film are obtained along with film thickness, over a wide range of wavelengths from deep ultraviolet to near infrared wavelengths (190–1000 nm). how to use obdii code reader
Refractive Index of Amorphous Silicon - Filmetrics
WebAmorphous silicon or hydrogenated a-Si:H is an important material for photovoltaic devices. These devices consist of films with thicknesses of about 1 ,um and it is important to know the refractive index and absorption coefficient as function of wavelength to predict the photoelectric behaviour of a device. WebRefractive Index Database The table below contains links to refractive index data for common materials. Each material in the database has refractive index listed as a function … WebHydrogenated amorphous silicon (a-Si:H) is a suitable material for the realization of planar waveguides to route and modulate the optical signal. a-Si:H can be deposited by plasma-enhanced chemical-vapor deposition (PECVD) on almost any substrate at temperatures below 230 °C, thus preserving compatibility with any microelectronic technology. how to use oba